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Excelics Semiconductor

EID1515-10 Datasheet Preview

EID1515-10 Datasheet

15.35-15.75 GHz 10-Watt Internally Matched Power FET

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UPDATED 12/21/2006
www.DataSheet4U.com
EID1515-10
15.35-15.75 GHz 10-Watt Internally Matched Power FET
FEATURES
15.35– 15.75GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+40.0 dBm Output Power at 1dB Compression
5.5 dB Power Gain at 1dB Compression
20% Power Added Efficiency
Hermetic Metal Flange Package
.827±.010 .669
Excelics
EID1515-10
.120 MIN YYWW
SN
.024
.421
.120 MIN
.168±.010
.125
.508±.008
.442
ALL DIMENSIONS IN INCHES
.004
.063
.004
.105±.008
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL
PARAMETERS/TEST CONDITIONS1
P1dB
G1dB
G
PAE
Output Power at 1dB Compression
f = 15.35-15.75GHz
VDS = 10 V, IDSQ 3200mA
Gain at 1dB Compression
f = 15.35-15.75GHz
VDS = 10 V, IDSQ 3200mA
Gain Flatness
f = 15.35-15.75GHz
VDS = 10 V, IDSQ 3200mA
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ 3200mA
f = 15.35-15.75GHz
Id1dB
Drain Current at 1dB Compression
f = 15.35-15.75GHz
IDSS
Saturated Drain Current
VDS = 3 V, VGS = 0 V
VP Pinch-off Voltage
VDS = 3 V, IDS = 60 mA
RTH Thermal Resistance2
Note:
1. Tested with 50 Ohm gate resistor.
2. Overall Rth depends on case mounting.
Caution! ESD sensitive device.
MIN
39.0
4.5
TYP
40.0
5.5
22
3500
5000
-1.0
2.5
MAX
±0.6
4500
7500
-2.5
3.0
UNITS
dBm
dB
dB
%
mA
mA
V
oC/W
MAXIMUM RATING1,2 (Ta = 25°C)
SYMBOLS
PARAMETERS
ABSOLUTE1
VDS
VGS
Igsf
Drain-Source Voltage
Gate-Source Voltage
Forward Gate Current
15V
-5V
120mA
Igsr
Reverse Gate Current
-18mA
Pin
Tch
Tstg
Input Power
Channel Temperature
Storage Temperature
39.0dBm
175 oC
-65 to +175 oC
Pt Total Power Dissipation
50W
Note:
1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
CONTINUOUS2
10V
-3V
40mA
-6mA
@ 3dB Compression
175 oC
-65 to +175 oC
50W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 2
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
Revised December 2006




Excelics Semiconductor

EID1515-10 Datasheet Preview

EID1515-10 Datasheet

15.35-15.75 GHz 10-Watt Internally Matched Power FET

No Preview Available !

www.DataSheet4U.com
UPDATED 12/21/2006
EID1515-10
15.35-15.75 GHz 10-Watt Internally Matched Power FET
DISCLAIMER
EXCELICS SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. EXCELICS DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN.
LIFE SUPPORT POLICY
EXCELICS SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE
SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF EXCELICS SEMICONDUCTOR,
INC. AS HERE IN:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for
use provided in the labeling, can be reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be
reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 2 of 2
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
Revised December 2006


Part Number EID1515-10
Description 15.35-15.75 GHz 10-Watt Internally Matched Power FET
Maker Excelics Semiconductor
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