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EID1616-3 - 16.2-16.5 GHz 3-Watt Internally-Matched Power FET

Features

  • 16.2-16.5 GHz Bandwidth.
  • Input/Output Impedance Matched to 50 Ohms.
  • +35.0 dBm Output Power at 1dB Compression.
  • 6.0 dB Power Gain at 1dB Compression.
  • 25% Power Added Efficiency.
  • Hermetic Metal Flange Package.
  • 100% Tested for DC, RF, and RTH .060 MIN. Excelics EID1616-3 .060 MIN. .650±.008 .512 GATE DRAIN .319 YYWW SN .094 .382 .022 .045 .004 .070 ±.008 .129 ALL.

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Datasheet Details

Part number EID1616-3
Manufacturer Excelics Semiconductor
File Size 202.96 KB
Description 16.2-16.5 GHz 3-Watt Internally-Matched Power FET
Datasheet download datasheet EID1616-3 Datasheet

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Full PDF Text Transcription

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www.DataSheet4U.com EID1616-3 UPDATED: 07/24/2008 16.2–16.5 GHz 3-Watt Internally-Matched Power FET FEATURES • 16.2-16.5 GHz Bandwidth • Input/Output Impedance Matched to 50 Ohms • +35.0 dBm Output Power at 1dB Compression • 6.0 dB Power Gain at 1dB Compression • 25% Power Added Efficiency • Hermetic Metal Flange Package • 100% Tested for DC, RF, and RTH .060 MIN. Excelics EID1616-3 .060 MIN. .650±.008 .512 GATE DRAIN .319 YYWW SN .094 .382 .022 .045 .004 .070 ±.008 .129 ALL DIMENSIONS IN INCHES ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 16.2-16.5GHz VDS = 10 V, IDSQ ≈ 1200mA Gain at 1dB Compression f = 16.2-16.5GHz VDS = 10 V, IDSQ ≈ 1200mA Gain Flatness f = 16.2-16.
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