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Excelics Semiconductor

EID1616-3 Datasheet Preview

EID1616-3 Datasheet

16.2-16.5 GHz 3-Watt Internally-Matched Power FET

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UPDATED: 07/24/2008
www.DataSheet4U.com
EID1616-3
16.2–16.5 GHz 3-Watt Internally-Matched Power FET
FEATURES
16.2-16.5 GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+35.0 dBm Output Power at 1dB Compression
6.0 dB Power Gain at 1dB Compression
25% Power Added Efficiency
Hermetic Metal Flange Package
100% Tested for DC, RF, and RTH
.060 MIN.
.650±.008 .512
GATE
Excelics
EID1616-3
YYWW
.060 MIN.
DRAIN
.022
.319
SN
.094
.382
.045
.004 .070 ±.008
.129
ALL DIMENSIONS IN INCHES
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL
P1dB
G1dB
G
PAE
Id1dB
IDSS
VP
RTH
PARAMETERS/TEST CONDITIONS1
Output Power at 1dB Compression
f = 16.2-16.5GHz
VDS = 10 V, IDSQ 1200mA
Gain at 1dB Compression
f = 16.2-16.5GHz
VDS = 10 V, IDSQ 1200mA
Gain Flatness
f = 16.2-16.5GHz
VDS = 10 V, IDSQ 1200mA
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ 1200mA
f = 16.2-16.5GHz
Drain Current at 1dB Compression
f = 16.2-16.5GHz
Saturated Drain Current
Pinch-off Voltage
Thermal Resistance2
VDS = 3 V, VGS = 0 V
VDS = 3 V, IDS = 20 mA
Caution! ESD sensitive device.
MIN
34.5
TYP
35.0
MAX
UNITS
dBm
5.0 6.0
dB
±0.6 dB
25 %
700
1100
-2.5
8.5
900
1500
-4.0
10.5
mA
mA
V
oC/W
Notes: 1. Tested with 100 Ohm gate resistor.
2. Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION1,2
SYMBOL
VDS
VGS
IDS
IGSF
PIN
PT
TCH
TSTG
CHARACTERISTIC
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Forward Gate Current
Input Power
Total Power Dissipation
Channel Temperature
Storage Temperature
VALUE
10 V
-4.5 V
IDSS
20 mA
@ 3dB compression
11.5 W
150°C
-65/+150°C
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 2
Revised July 2008




Excelics Semiconductor

EID1616-3 Datasheet Preview

EID1616-3 Datasheet

16.2-16.5 GHz 3-Watt Internally-Matched Power FET

No Preview Available !

UPDATED: 07/24/2008
www.DataSheet4U.com
EID1616-3
16.2–16.5 GHz 3-Watt Internally-Matched Power FET
DISCLAIMER
EXCELICS SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. EXCELICS DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN.
LIFE SUPPORT POLICY
EXCELICS SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE
SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF EXCELICS
SEMICONDUCTOR, INC. AS HERE IN:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the
body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be
reasonably expected to cause the failure of the life support device or system, or to affect its safety or
effectiveness
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 2 of 2
Revised July 2008


Part Number EID1616-3
Description 16.2-16.5 GHz 3-Watt Internally-Matched Power FET
Maker Excelics Semiconductor
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