EID8596A1-12 Datasheet | Excelics Semiconductor

FEATURES - - - - - - - 8.50 - 9.60 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +41.5 d Bm Output Power at 1d B pression 9.0 d B Power Gain at 1d B pression 35% Power Added Efficiency Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH DESCRIPTION The EID8596A1-12 is a high power, highly linear, single stage MFET amplifier in a flange mount package. This amplifier features Excelics’ unique PHEMT transistor technology. Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1d B G1d B ∆G PAE Id1d B IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1d B pression f = 8.50-9.60GHz VDS = 10 V, IDSQ ≈ 3600m A Gain at 1d B pression f = 8.50-9.60GHz VDS = 10 V, IDSQ ≈ 3600m A Gain Flatness f = 8.50-9.60GHz VDS = 10 V, IDSQ ≈ 3600m A Power Added Efficiency at 1d B pression VDS = 10 V, IDSQ ≈ 3600m A f = 8.50-9.60GHz Drain Current at 1d B pression f = 8.50-9.60GHz Saturated Drain Current Pinch-off Voltage Thermal Resistance2 VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 60 m A MIN 40.5 8.0 TYP 41.5 9.0 ±0.6 35 4000 6500 -1.2 2.5 4600 7500 -2.5 3.0 o UNITS d Bm d B d B % m A m A V C/W Notes: 1. Tested with 50 Ohm gate resistor. 2. Overall Rth depends on case mounting. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: .excelics. page 1 of 4 Revised July 2007 .. UPDATED 07/12/2007 - 9.60 GHz 12-Watt Internally-Matched Power FET CHARACTERISTIC VALUE 10 V -3.0 V IDSS 120 m A @ 3d B pression 42 W 150°C -65/+150°C ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION1,2 SYMBOL VDS VGS IDS IGSF PIN PT TCH TSTG Drain to Source Voltage Gate to Source Voltage Drain Current Forward Gate Current Input Power Total Power Dissipation Channel Temperature Storage Temperature Notes: 1. Operating the device beyond any of the above ratings may result in permanent damage or reduction of MTTF. 2. Bias conditions must also satisfy the...