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EID8596A1-12 Datasheet Preview

EID8596A1-12 Datasheet

8.50-9.60 GHz 12-Watt Internally-Matched Power FET

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UPDATED 07/12/2007
EID8596A1-12
8.50 – 9.60 GHz 12-Watt Internally-Matched Power FET
FEATURES
8.50 – 9.60 GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+41.5 dBm Output Power at 1dB Compression
9.0 dB Power Gain at 1dB Compression
35% Power Added Efficiency
Hermetic Metal Flange Package
100% Tested for DC, RF, and RTH
DESCRIPTION
The EID8596A1-12 is a high power, highly linear,
single stage MFET amplifier in a flange mount
package. This amplifier features Excelics’ unique
PHEMT transistor technology.
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL
P1dB
G1dB
G
PAE
PARAMETERS/TEST CONDITIONS1
Output Power at 1dB Compression f = 8.50-9.60GHz
VDS = 10 V, IDSQ 3600mA
Gain at 1dB Compression
f = 8.50-9.60GHz
VDS = 10 V, IDSQ 3600mA
Gain Flatness
f = 8.50-9.60GHz
VDS = 10 V, IDSQ 3600mA
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ 3600mA
f = 8.50-9.60GHz
Id1dB
Drain Current at 1dB Compression f = 8.50-9.60GHz
IDSS Saturated Drain Current
VDS = 3 V, VGS = 0 V
VP Pinch-off Voltage
VDS = 3 V, IDS = 60 mA
RTH Thermal Resistance2
MIN
40.5
8.0
TYP
41.5
9.0
35
4000
6500
-1.2
2.5
MAX
±0.6
4600
7500
-2.5
3.0
UNITS
dBm
dB
dB
%
mA
mA
V
oC/W
Notes:
1. Tested with 50 Ohm gate resistor.
2. Overall Rth depends on case mounting.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 4
Revised July 2007




Excelics Semiconductor

EID8596A1-12 Datasheet Preview

EID8596A1-12 Datasheet

8.50-9.60 GHz 12-Watt Internally-Matched Power FET

No Preview Available !

www.DataSheet4U.com
EID8596A1-12
UPDATED 07/12/2007
8.50 – 9.60 GHz 12-Watt Internally-Matched Power FET
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION1,2
SYMBOL
CHARACTERISTIC
VALUE
VDS Drain to Source Voltage
10 V
VGS Gate to Source Voltage
-3.0 V
IDS Drain Current
IDSS
IGSF Forward Gate Current
120 mA
PIN Input Power
@ 3dB compression
PT Total Power Dissipation
42 W
TCH Channel Temperature
150°C
TSTG Storage Temperature
-65/+150°C
Notes:
1. Operating the device beyond any of the above ratings may result in permanent damage or reduction of MTTF.
2. Bias conditions must also satisfy the following equation PT < (TCH –TPKG)/RTH; where TPKG = temperature of package, and
PT = (VDS * IDS) – (POUT – PIN).
PERFORMANCE DATA
Typical S-Parameters (T= 25°C, 50system, de-embedded to edge of package)
VDS = 10 V, IDSQ 3600mA
S11 and S22
Swp Max
10GHz
20
S21 and S12
-3.0
-4.0
-5.0
-10.0
3.0
4.0
5.0
10.0
10
0
-10
DB(|S[2,1]|) *
EID8596-12
DB(|S[1,2]|) *
EID8596-12
-20-0.2
0.2
-0.4
FREQ
(GHz)
8.00
8.25
8.50
8.75
9.00
9.25
9.50
9.75
10.00
10.25
10.50
S[1,1] *
EID8596-12
S[2,2] *
EID8596-12
0.4
Swp Min
8GHz
--- S11 ---
MAG
ANG
0.665
13.310
0.628
-10.290
0.575
-33.260
0.506
-58.660
0.426
-88.220
0.343 -124.370
0.273 -168.710
0.235
139.600
0.223
86.780
0.200
27.440
0.209
-47.720
-30
8
--- S21 ---
MAG
ANG
3.042 -101.000
3.060 -126.890
3.064 -151.970
3.146 -177.830
3.230
154.710
3.263
126.660
3.280
97.610
3.232
67.230
3.140
36.090
3.023
3.490
2.818
-30.940
8.5 9 9.5
Frequency (GHz)
10
--- S12 ---
MAG
ANG
0.043 -143.450
0.048 -171.390
0.051
165.500
0.056
139.920
0.060
114.480
0.063
87.140
0.065
59.430
0.066
28.560
0.066
-1.380
0.066
-36.490
0.063
-72.920
--- S22 ---
MAG
ANG
0.386
175.740
0.383
144.740
0.405
116.280
0.430
91.480
0.437
68.710
0.410
45.740
0.373
21.620
0.309
-5.450
0.235
-41.240
0.210
-95.270
0.291 -146.970
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 2 of 4
Revised July 2007


Part Number EID8596A1-12
Description 8.50-9.60 GHz 12-Watt Internally-Matched Power FET
Maker Excelics Semiconductor
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