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EID8596A1-12 - 8.50-9.60 GHz 12-Watt Internally-Matched Power FET

Description

The EID8596A1-12 is a high power, highly linear, single stage MFET amplifier in a flange mount package.

Features

  • 8.50.
  • 9.60 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +41.5 dBm Output Power at 1dB Compression 9.0 dB Power Gain at 1dB Compression 35% Power Added Efficiency Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH.

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Datasheet Details

Part number EID8596A1-12
Manufacturer Excelics Semiconductor
File Size 192.88 KB
Description 8.50-9.60 GHz 12-Watt Internally-Matched Power FET
Datasheet download datasheet EID8596A1-12 Datasheet
Additional preview pages of the EID8596A1-12 datasheet.

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www.DataSheet4U.com EID8596A1-12 UPDATED 07/12/2007 8.50 – 9.60 GHz 12-Watt Internally-Matched Power FET FEATURES • • • • • • • 8.50 – 9.60 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +41.5 dBm Output Power at 1dB Compression 9.0 dB Power Gain at 1dB Compression 35% Power Added Efficiency Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH DESCRIPTION The EID8596A1-12 is a high power, highly linear, single stage MFET amplifier in a flange mount package. This amplifier features Excelics’ unique PHEMT transistor technology. Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 8.50-9.
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