EMB06N03E Description
EMB06N03E N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: Pulse Width 300 sec, Duty Cycle 2%. 2Independent of operating temperature.
EMB06N03E is N-Channel Logic Level Enhancement Mode Field Effect Transistor manufactured by Excelliance MOS.
| Part Number | Description |
|---|---|
| EMB06N03A | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB06N03G | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB06N03GH | MOSFET |
| EMB06N03H | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB06N03HR | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
EMB06N03E N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: Pulse Width 300 sec, Duty Cycle 2%. 2Independent of operating temperature.