Datasheet4U Logo Datasheet4U.com

EMB06N03GH - MOSFET

📥 Download Datasheet

Datasheet preview – EMB06N03GH

Datasheet Details

Part number EMB06N03GH
Manufacturer Excelliance MOS
File Size 187.92 KB
Description MOSFET
Datasheet download datasheet EMB06N03GH Datasheet
Additional preview pages of the EMB06N03GH datasheet.

📁 Similar Datasheet

  • EMB09P03A - P-Channel 30V MOSFET (VBsemi)
  • EMB10 - PNP Digital Transistors (Rohm)
  • EMB10FHA - PNP -100mA -50V Complex Digital Transistors (ROHM)
  • EMB11 - Dual Digital Transistors (Rohm)
  • EMB11 - Dual Digital Transistors (JCET)
  • EMB1412 - EMB1412 MOSFET Gate Driver (Rev. B) (ETCTI)
  • EMB1428Q - EMB1428Q Switch Matrix Gate Driver (Rev. A) (ETCTI)
  • EMB1432Q - EMB1432Q 60-V 14-Channel Battery Stack Module Analog Front End (Rev. D) (ETCTI)
  • EMB1433Q - EMB1433Q 60-V 14-Channel Battery Stack Protection Chip with Programmable Window Comparator Supports Multi-Module Battery Packs (Rev. B) (ETCTI)
  • EMB1499Q - EMB1499Q Bidirectional Current DC-DC Controller (Rev. B) (ETCTI)
Other Datasheets by Excelliance MOS
  • EMB06N03G - N-Channel Logic Level Enhancement Mode Field Effect Transistor
  • EMB06N03A - N-Channel Logic Level Enhancement Mode Field Effect Transistor
  • EMB06N03E - N-Channel Logic Level Enhancement Mode Field Effect Transistor
  • EMB06N03H - N-Channel Logic Level Enhancement Mode Field Effect Transistor
  • EMB06N03HR - N-Channel Logic Level Enhancement Mode Field Effect Transistor
  • EMB06N03V - N-Channel Logic Level Enhancement Mode Field Effect Transistor
  • EMB06N06A - N-Channel Logic Level Enhancement Mode Field Effect Transistor
  • EMB06N06CS - N-Channel Logic Level Enhancement Mode Field Effect Transistor

Full PDF Text Transcription

Click to expand full text
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 6mΩ ID 18A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 100 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH, ID=20A, RG=25Ω L = 0.05mH Power Dissipation TA = 25 °C TA = 100 °C Operating Junction & Storage Temperature Range VGS ID IDM IAS EAS EAR PD Tj, Tstg THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction‐to‐Case RJC Junction‐to‐Ambient3 RJA 1Pulse width limited by maximum junction temperature.
Published: |