EMB06N03GH Overview
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: 2Duty cycle 1% 350°C / W when mounted on a 1 in2 pad of 2 oz copper. Pulse Width 300 sec, Duty Cycle 2%.
| Part number | EMB06N03GH |
|---|---|
| Datasheet | EMB06N03GH-ExcellianceMOS.pdf |
| File Size | 187.92 KB |
| Manufacturer | Excelliance MOS |
| Description | MOSFET |
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: 2Duty cycle 1% 350°C / W when mounted on a 1 in2 pad of 2 oz copper. Pulse Width 300 sec, Duty Cycle 2%.
See all Excelliance MOS datasheets
| Part Number | Description |
|---|---|
| EMB06N03G | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB06N03A | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB06N03E | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB06N03H | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB06N03HR | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB06N03V | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB06N06A | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB06N06CS | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB06N06H | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB06N06HS | N-Channel Logic Level Enhancement Mode Field Effect Transistor |