EMB06N06H Description
EMB06N06H N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: 2Duty cycle 1％ 3Pulsed drain current rating is package limited. Pulse Width 300 sec, Duty Cycle 2％.
- Part: EMB06N06H
- Manufacturer: Excelliance MOS
- Size: 205.30 KB
Related Excelliance MOS Datasheets
| Part Number | Description |
|---|---|
| EMB06N06HS | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB06N06A | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB06N06CS | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB06N03A | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB06N03E | N-Channel Logic Level Enhancement Mode Field Effect Transistor |