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EMB12K03GP - MOSFET

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Part number EMB12K03GP
Manufacturer Excelliance MOS
File Size 216.17 KB
Description MOSFET
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Dual Asymmetric N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: N‐CH‐Q1 N‐CH‐Q2 BVDSS 30V 30V RDSON (MAX.) 15.5mΩ 12.5mΩ ID 9A 10A UIS, Rg 100% Tested Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy L = 0.1mH, ID=10A, RG=25Ω Repetitive Avalanche Energy2 L = 0.05mH Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range VGS ID IDM IAS EAS EAR PD Tj, Tstg EMB12K03GP LIMITS ±20 ±20 9 10 6 7 36 40 12 12 5 5 2.5 2.5 2 1.
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