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EMB12P03H Datasheet - Excelliance MOS

EMB12P03H P-Channel Logic Level Enhancement Mode Field Effect Transistor

P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐30V RDSON (MAX.) 12mΩ ID ‐50A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy L = 0.1mH, ID=‐20A, RG=25Ω Power Dissipation TC = 25 °C TC = 100 °C Operating .

EMB12P03H-ExcellianceMOS.pdf

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Datasheet Details

Part number:

EMB12P03H

Manufacturer:

Excelliance MOS

File Size:

205.64 KB

Description:

P-channel logic level enhancement mode field effect transistor.

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EMB12P03H EMB12P03H P-Channel Logic Level Enhancement Mode Field Effect Transistor Excelliance MOS

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