EMB12P04A - MOSFET

Excelliance MOS

Datasheet Details

Part number	EMB12P04A
Manufacturer	Excelliance MOS
File Size	219.21 KB
Description	MOSFET
Datasheet	EMB12P04A Datasheet

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Other Datasheets by Excelliance MOS

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Full PDF Text Transcription

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P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐40V RDSON (MAX.) 12.6mΩ ID ‐25A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH, ID=‐25A, RG=25Ω L = 0.05mH Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range VGS ID IDM IAS EAS EAR PD Tj, Tstg EMB12P04A LIMITS ±20 ‐25 ‐18 ‐100 ‐25 31.

Published: Apr 26, 2017 |