| Description | P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS -40V RDSON (MAX.) 44mΩ ID -25A P Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage VGS Continuous Drain Current Pulsed Drain Current1 TC = 25 °C ID TC = 100 °C I... |
| Features |
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNIT
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current
On-State Drain Current1 Drain-Source On-State Resistance1
Forward Transconductance1
V(BR)DSS VGS(th) IGSS IDSS
ID(ON) RDS(ON)
gfs
VGS = 0V, ID = -250A VDS = VGS, ID = -250...
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| Datasheet |
 EMB44P04A Datasheet 837.71KB |
