| Description | N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: N-CH BVDSS 100V RDSON (MAX.)@VGS=10V 135mΩ RDSON (MAX.)@VGS=4.5V 170mΩ ID @TC=25℃ 10A N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Gate-Source Voltage Continuous Drain Current Pulsed Drai... |
| Features |
75
UNIT °C / W
2019/10/2 p.1
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
EMBA5N10AS
LIMITS
UNIT
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current
On-State Drain Current1 Drain-Source On-State Resistance1
Forward...
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| Datasheet |
 EMBA5N10AS Datasheet 423.47KB |
