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EMBA5N10G - MOSFET

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Datasheet Details

Part number EMBA5N10G
Manufacturer Excelliance MOS
File Size 179.99 KB
Description MOSFET
Datasheet download datasheet EMBA5N10G Datasheet

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Other Datasheets by Excelliance MOS
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Full PDF Text Transcription

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    N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  100V  D RDSON (MAX.)  150mΩ  ID  4A  G   UIS, Rg 100% Tested  S Pb‐Free Lead Plating & Halogen Free    ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)  PARAMETERS/TEST CONDITIONS  SYMBOL  Gate‐Source Voltage  Continuous Drain Current  Pulsed Drain Current1  TA = 25 °C  TA = 100 °C  Avalanche Current  Avalanche Energy  Repetitive Avalanche Energy2  L = 0.1mH, ID=4A, RG=25Ω  L = 0.05mH  Power Dissipation  TA = 25 °C  TA = 100 °C  Operating Junction & Storage Temperature Range  VGS  ID  IDM  IAS  EAS  EAR  PD  Tj, Tstg  EMBA5N10G LIMITS  ±20  4  2.8  16  4  0.8  0.4  2.
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