EMD04N70A Datasheet - Excelliance MOS

EMD04N70A MOSFET

N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 700V D RDSON (MAX.) 3Ω ID 4A G UIS, 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 3mH, ID=3A, RG=25Ω L = 0.5mH Power Dissipation TC = 2.

EMD04N70A-ExcellianceMOS.pdf

EMD04N70A Datasheet Preview — Preview of EMD04N70A PDF

Datasheet Details

Part number:

EMD04N70A

Manufacturer:

Excelliance MOS

File Size:

196.64 KB

Description:

Mosfet.

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EMD04N70A EMD04N70A MOSFET Excelliance MOS

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