Datasheet Details
| Part number | EMD11N15E |
|---|---|
| Manufacturer | Excelliance MOS |
| File Size | 453.55 KB |
| Description | Single N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Datasheet | EMD11N15E-ExcellianceMOS.pdf |
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Overview: Single N-Channel Logic Level Enhancement Mode Field Effect Transistor ▪Product Summary: ▪.
| Part number | EMD11N15E |
|---|---|
| Manufacturer | Excelliance MOS |
| File Size | 453.55 KB |
| Description | Single N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Datasheet | EMD11N15E-ExcellianceMOS.pdf |
|
|
|
: N-CH BVDSS 150V RDSON (MAX.)@VGS=10V 11.0mΩ ID @TC=25℃ 120A ID @TA=25℃ 10A Single N Channel MOSFET Rg 100% Tested Pb-Free Lead Plating & Halogen Free ▪ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage Continuous Drain Current TC = 25 °C TC = 100 °C Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C Avalanche Current Avalanche Energy L = 0.1mH Repetitive Avalanche Energy2 L = 0.05mH Power Dissipation TC = 25 °C TC = 100 °C Power Dissipation TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range VGS ID ID IDM IAS EAS EAR PD PD Tj, Tstg EMD11N15E LIMITS ±20 120 76 10 8 400 50 125.0 62.5 277.8 111.1 2 1.3 -55 to 150 UNIT V A mJ W W °C ▪THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction-to-Case RθJC Junction-to-Ambient3 RθJA 1Pulse width limited by maximum junction temperature.
2Duty cycle < 1％ 362.5°C / W when mounted on a 1 in2 pad of 2 oz copper.
4Guarantee by Engineering test TYPICAL MAXIMUM 0.45 62.5 UNIT °C/W 2021/3/15 P.1 A.0 EMD11N15E ▪ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS MIN STATIC Drain-Source Breakdown Voltage4 Gate Threshold Voltage4 Gate-Body Leakage4 Zero Gate Voltage Drain Current4 On-State Drain Current1 Drain-Source On-State Resistance1,4 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs VGS = 0V, ID = 250uA 150 VDS = VGS, ID = 250uA 2 VDS = 0V, VGS = ±20V VDS = 120V, VGS = 0V VDS=100V, VGS=0V, TJ = 125 °C VDS = 10V, VGS = 10V 120 VGS = 10V, ID = 20A VDS = 5V, ID = 20A DYNAMIC Input Capacitance5 Output Capacitance5 Reverse Transfer Capacitance5 Gate Resistance4,5 Total Gate Charge1,2,5 Gate-Source Charge1,2,5 Gate-Drain Charge1,2,5 Turn-On Delay Time1,2,5 Rise Time1,2,5 Turn-Off Delay Time1,2
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