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N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
RDSON (MAX.)
60mΩ
ID
3.2A
Pb‐Free Lead Plating & Halogen Free ESD Protection
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA = 70 °C
Power Dissipation
TA = 25 °C TA = 70 °C
Operating Junction & Storage Temperature Range
VGS ID IDM PD Tj, Tstg
EMZF60N03Z
LIMITS ±12 3.2 2.5 12.8 1.3 0.84
‐55 to 150
UNIT V
A
W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature. 2Duty cycle 1％
395°C / W when mounted on a 1 in2 pad of 2 oz copper.
EMZF60N03Z Datasheet
