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FKD0107 Datasheet P-Channel MOSFET

Manufacturer: FETek

Datasheet Details

Part number FKD0107
Manufacturer FETek
File Size 519.06 KB
Description P-Channel MOSFET
Download FKD0107 Download (PDF)

General Description

The FKD0107 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.

The FKD0107 meet the RoHS and Green Product requirement with full function reliability approved.

TO252 Pin Configuration Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ ID@TA=70℃ IDM PD@TC=25℃ PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ -10V1 Continuous Drain Current, VGS @ -10V1 Continuous Drain Current, VGS @ -10V1 Continuous Drain Current, VGS @ -10V1 Pulsed Drain Current2 Total Power Dissipation3 Total Power Dissipation3 Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol RθJA RθJC Parameter Thermal Resistance Junction-ambient 1 Thermal Resistance Junction-Case1 Data and specifications subject to change without notice.

Overview

FETek Technology Corp.

 Super Low Gate Charge  Green Device Available  Excellent Cdv/dt effect decline  Advanced high cell density Trench technology FKD0107 P-Ch 100V Fast Switching MOSFETs Product Summary BVDSS -100V RDSON 0.65Ω ID -4.