Datasheet Details
| Part number | FKD3016 |
|---|---|
| Manufacturer | FETek |
| File Size | 573.76 KB |
| Description | N-Channel MOSFET |
| Download | FKD3016 Download (PDF) |
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| Part number | FKD3016 |
|---|---|
| Manufacturer | FETek |
| File Size | 573.76 KB |
| Description | N-Channel MOSFET |
| Download | FKD3016 Download (PDF) |
|
|
|
The FKD3016 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
The FKD3016 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
FKD3016 N-Ch 30V Fast Switching MOSFETs Product Summary BVDSS RDSON ID 30V 4mΩ 96A TO252 Pin Configuration Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ ID@TA=70℃ IDM EAS IAS PD@TC=25℃ PD@TA=25℃ TSTG TJ ‘ Thermal Data Symbol RθJA RθJA RθJC Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range Parameter Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Ambient 1 (t ≤10s) Thermal Resistance Junction-Case1 Rating 10s Steady State 30 ±20 96 68 30 19 25 16 192 144.7 53.8 62.5 6 2.42 -55 to 175 -55 to 175 Units V V A A A A A mJ A W W ℃ ℃ Typ.
FETek Technology Corp.
Super Low Gate Charge 100% EAS Guaranteed Green Device Available Excellent CdV/dt effect decline Advanced high cell density.
| Part Number | Description |
|---|---|
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| FKD3105 | P-Channel MOSFET |