Datasheet Details
| Part number | FKS3031 |
|---|---|
| Manufacturer | FETek |
| File Size | 715.15 KB |
| Description | P-Channel MOSFET |
| Download | FKS3031 Download (PDF) |
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| Part number | FKS3031 |
|---|---|
| Manufacturer | FETek |
| File Size | 715.15 KB |
| Description | P-Channel MOSFET |
| Download | FKS3031 Download (PDF) |
|
|
|
SOP8 Pin Configuration The FKS3031 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
The FKS3031 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=100℃ IDM EAS IAS PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ -10V1 Continuous Drain Current, VGS @ -10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol RθJA RθJC Parameter Thermal Resistance Junction-ambient 1(t≦10S) Thermal Resistance Junction-ambient 1(Steady State) Thermal Resistance Junction-case 1 Rating -30 ±20 -16.8 -10.6 -120 80 -40 3.1 -55 to 150 -55 to 150 Units V V A A A mJ A W ℃ ℃ Typ.
FETek Technology Corp.
FKS3031 P-Ch 30V Fast Switching MOSFETs Super Low Gate Charge 100% EAS Guaranteed Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology Product Summary BVDSS -30V RDSON 7mΩ ID -16.
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