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IRFS650A Datasheet - Fairchild

IRFS650A Advanced Power MOSFET

IRFS650A Features

* Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V Low RDS(ON) : 0.071 Ω (Typ.) 1 IRFS650A BVDSS = 200 V RDS(on) = 0.085 Ω ID = 15.8 A TO-220F 2 3 1.Gate 2. Drain 3.

IRFS650A_Fairchild.pdf