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IRFS650B Datasheet - Fairchild

IRFS650B 200V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the a.

IRFS650B Features

* 15.8A, 200V, RDS(on) = 0.085Ω @VGS = 10 V Low gate charge ( typical 95 nC) Low Crss ( typical 75 pF) Fast switching 100% avalanche tested Improved dv/dt capability D !

* ◀ ▲

* G! GD S TO-220F IRFS Series ! S Absolute M

IRFS650B_Fairchild.pdf

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Datasheet Details

Part number:

IRFS650B

Manufacturer:

Fairchild

File Size:

651.18 KB

Description:

200v n-channel mosfet.

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IRFS650B IRFS650B 200V N-Channel MOSFET Fairchild

IRFS650B Distributor