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IRFS650B - 200V N-Channel MOSFET

IRFS650B Description

IRFS650B November 2001 IRFS650B 200V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

IRFS650B Features

* 15.8A, 200V, RDS(on) = 0.085Ω @VGS = 10 V Low gate charge ( typical 95 nC) Low Crss ( typical 75 pF) Fast switching 100% avalanche tested Improved dv/dt capability D !
* ◀ ▲
* G! GD S TO-220F IRFS Series ! S Absolute M

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Datasheet Details

Part number
IRFS650B
Manufacturer
Fairchild
File Size
651.18 KB
Datasheet
IRFS650B_Fairchild.pdf
Description
200V N-Channel MOSFET

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200V N-Channel MOSFET Fairchild
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