Part number:
IRFS630A
Manufacturer:
Inchange Semiconductor
File Size:
53.21 KB
Description:
N-channel mosfet transistor.
* Avalanche Rugged Technology
* Rugged Gate Oxide Technology
* Lower Input Capacitance
* Improved Gate Charge
* Extended Safe Operating Area DESCRIPTION
* Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PAR
IRFS630A
Inchange Semiconductor
53.21 KB
N-channel mosfet transistor.
📁 Related Datasheet
IRFS630 - 200V/9A POWER MOSFET
(TAITRON)
200V/9A POWER MOSFET (N-Channel) IRF630/IRFS630 200V/9A Power MOSFET (N-Channel)
General Description
• IRF630/IRFS630 are N-Channel enhancement mode p.
IRFS630 - N-CHANNEL MOSFET
(BLUE ROCKET ELECTRONICS)
IRFS630
Rev.D Mar.-2016
DATA SHEET
/ Descriptions TO-220F N MOS 。N-CHANNEL MOSFET in a TO-220F Plastic Package.
/ Features
,,。 Low gate charge.
IRFS630 - N-Channel Power MOSFET
(Samsung)
.
IRFS630A - Advanced Power MOSFET
(Fairchild)
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Ope.
IRFS630B - 200V N-Channel MOSFET
(Fairchild)
IRF630B/IRFS630B
IRF630B/IRFS630B
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produ.
IRFS631 - N-Channel Power MOSFET
(Samsung)
.
IRFS634 - 250V/5.5A N-Channel Power MOSFET
(TAITRON)
250V/5.5A N-Channel Power MOSFET (Discontinued)
IRFS634 SAMSUNG
General Description
Low on resistance Improved inductive ruggedness Fast switc.
IRFS634 - N-Channel MOSFET
(LZG)
IRFS634(CS634F)
N-Channel MOSFET/N MOS
: DC/DC 。
Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch .
