IRFS614B Datasheet - Fairchild

IRFS614B - 250V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the a.

IRFS614B Features

* 2.8A, 250V, RDS(on) = 2.0Ω @VGS = 10 V Low gate charge ( typical 8.1 nC) Low Crss ( typical 7.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G G DS TO-220 IRF Series GD S TO-220F IRFS Series S Absolute Maximum

IRFS614B_Fairchild.pdf

IRFS614B Datasheet Preview — Preview of IRFS614B PDF

Datasheet Details

Part number:

IRFS614B

Manufacturer:

Fairchild

File Size:

855.44 KB

Description:

250v n-channel mosfet.

IRFS614B Distributor

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IRFS614B 250V N-Channel MOSFET Fairchild