Datasheet4U Logo Datasheet4U.com

IRFS614B - 250V N-Channel MOSFET

IRFS614B Description

IRF614B/IRFS614B November 2001 IRF614B/IRFS614B 250V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

IRFS614B Features

* 2.8A, 250V, RDS(on) = 2.0Ω @VGS = 10 V Low gate charge ( typical 8.1 nC) Low Crss ( typical 7.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G G DS TO-220 IRF Series GD S TO-220F IRFS Series S Absolute Maximum

📥 Download Datasheet

Preview of IRFS614B PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
IRFS614B
Manufacturer
Fairchild
File Size
855.44 KB
Datasheet
IRFS614B_Fairchild.pdf
Description
250V N-Channel MOSFET

📁 Related Datasheet

  • IRFS610A - N-Channel MOSFET (Inchange Semiconductor)
  • IRFS620A - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • IRFS624A - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • IRFS630 - 200V/9A POWER MOSFET (TAITRON)
  • IRFS630A - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • IRFS631 - N-Channel Power MOSFET (Samsung)
  • IRFS634 - 250V/5.5A N-Channel Power MOSFET (TAITRON)
  • IRFS634A - N-Channel MOSFET Transistor (Inchange Semiconductor)

📌 All Tags

Fairchild IRFS614B-like datasheet

IRFS614B Stock/Price