IRFS620B 200V N-Channel MOSFET

Fairchild

Description

IRF620B/IRFS620B November 2001 IRF620B/IRFS620B 200V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

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Datasheet Specifications

Part number: IRFS620B
Manufacturer: Fairchild
File Size: 875.32 KB
Datasheet: IRFS620B_Fairchild.pdf
Description: 200V N-Channel MOSFET

Features

* 5.0A, 200V, RDS(on) = 0.8Ω @VGS = 10 V Low gate charge ( typical 12 nC) Low Crss ( typical 10 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G G DS TO-220 IRF Series GD S TO-220F IRFS Series S Absolute Maximum R

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IRFS620B 200V N-Channel MOSFET Fairchild

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