IRFS620B Datasheet - Fairchild

IRFS620B - 200V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the a.

IRFS620B Features

* 5.0A, 200V, RDS(on) = 0.8Ω @VGS = 10 V Low gate charge ( typical 12 nC) Low Crss ( typical 10 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G G DS TO-220 IRF Series GD S TO-220F IRFS Series S Absolute Maximum R

IRFS620B_Fairchild.pdf

IRFS620B Datasheet Preview — Preview of IRFS620B PDF

Datasheet Details

Part number:

IRFS620B

Manufacturer:

Fairchild

File Size:

875.32 KB

Description:

200v n-channel mosfet.

IRFS620B Distributor

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IRFS620B 200V N-Channel MOSFET Fairchild