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IRFS640B Datasheet - Fairchild

IRFS640B 200V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the a.

IRFS640B Features

* 18A, 200V, RDS(on) = 0.18Ω @VGS = 10 V Low gate charge ( typical 45 nC) Low Crss ( typical 45 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G G DS TO-220 IRF Series GD S TO-220F IRFS Series S Absolute Maximum R

IRFS640B_Fairchild.pdf

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Datasheet Details

Part number:

IRFS640B

Manufacturer:

Fairchild

File Size:

916.61 KB

Description:

200v n-channel mosfet.

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IRFS640B IRFS640B 200V N-Channel MOSFET Fairchild

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