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IRFS640B - 200V N-Channel MOSFET

IRFS640B Description

IRF640B/IRFS640B November 2001 IRF640B/IRFS640B 200V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

IRFS640B Features

* 18A, 200V, RDS(on) = 0.18Ω @VGS = 10 V Low gate charge ( typical 45 nC) Low Crss ( typical 45 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G G DS TO-220 IRF Series GD S TO-220F IRFS Series S Absolute Maximum R

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Datasheet Details

Part number
IRFS640B
Manufacturer
Fairchild
File Size
916.61 KB
Datasheet
IRFS640B_Fairchild.pdf
Description
200V N-Channel MOSFET

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200V N-Channel MOSFET Fairchild
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