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Fairchild Semiconductor Electronic Components Datasheet

MPSA63 Datasheet

PNP Darlington Transistor

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MPSA63 pdf
Discrete POWER & Signal
Technologies
MPSA63
MMBTA63
PZTA63
C
BE
TO-92
C
SOT-23
Mark: 2U
E
B
C
SOT-223
C
B
E
PNP Darlington Transistor
This device is designed for applications requiring extremely high
current gain at currents to 800 mA. Sourced from Process 61.
See MPSA64 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCES
VCBO
VEBO
IC
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
30
30
10
1.2
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
A
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
MPSA63
*MMBTA63
PD Total Device Dissipation
Derate above 25°C
RθJC
Thermal Resistance, Junction to Case
625
5.0
83.3
350
2.8
RθJA Thermal Resistance, Junction to Ambient 200
357
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
**PZTA63
1,000
8.0
125
Units
mW
mW/°C
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation
A63, Rev A


Fairchild Semiconductor Electronic Components Datasheet

MPSA63 Datasheet

PNP Darlington Transistor

No Preview Available !

MPSA63 pdf
PNP Darlington Transistor
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V(BR)CES
ICBO
IEBO
Collector-Emitter Breakdown Voltage
Collector-Cutoff Current
Emitter-Cutoff Current
IC = 100 µA, IB = 0
VCB = 30 V, IE = 0
VEB = 10 V, IC = 0
ON CHARACTERISTICS*
hFE DC Current Gain
VCE(sat)
VBE(on)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
IC = 10 mA, VCE = 5.0 V
IC = 100 mA, VCE = 5.0 V
IC = 100 mA, IB = 0.1 mA
IC = 100 mA, VCE = 5.0 V
SMALL SIGNAL CHARACTERISTICS
fT Current Gain - Bandwidth Product
*Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
IC = 10 mA, VCE = 5.0 V,
f = 100 MHz
30 V
100 nA
100 nA
5,000
10,000
1.5
2.0
V
V
125 MHz


Part Number MPSA63
Description PNP Darlington Transistor
Maker Fairchild
Total Page 2 Pages
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