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NDB5060L - N-Channel MOSFET

Description

These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

Features

  • 26 A, 60 V. RDS(ON) = 0.05 Ω @ VGS= 5 V RDS(ON) = 0.035 Ω @ VGS= 10 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount.

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Datasheet Details

Part number NDB5060L
Manufacturer Fairchild
File Size 358.96 KB
Description N-Channel MOSFET
Datasheet download datasheet NDB5060L Datasheet
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Full PDF Text Transcription

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October 1996 NDP5060L / NDB5060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. Features 26 A, 60 V. RDS(ON) = 0.05 Ω @ VGS= 5 V RDS(ON) = 0.
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