42 and 40A, 100V. RDS(ON) = 0.038 and 0.042Ω. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the ne.

such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low i.

These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide super.

NDB710B

NDB710A

NDB710AE

NDB7050

NDB7050L

NDB7051

NDB7051L

NDB7052

NDB7052L

NDB7060

NDB7060L

NDB7061

NDB7061L