Datasheet Summary
March 1996
NDC7002N Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
These dual N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. These devices is particularly suited for low voltage applications requiring a low current high side switch.
Features
0.51A, 50V, RDS(ON) = 2Ω @ VGS=10V High density cell design for low RDS(ON). Proprietary SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities....