Description
These dual N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
Features
- 0.51A, 50V, RDS(ON) = 2Ω @ VGS=10V High density cell design for low RDS(ON). Proprietary SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities. High saturation current. ____________________________________________________________________________________________
4
3
5
2
6
SOT-6 (SuperSOTTM-6)
1
Absolute Maximum Ratings T A = 25°C unless otherwise noted
Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage - Continuous Drain C.
NDC7002_FairchildSemiconductor.pdf
