NDC7002 mosfet equivalent, dual n-channel mosfet.
0.51A, 50V, RDS(ON) = 2Ω @ VGS=10V High density cell design for low RDS(ON). Proprietary SuperSOTTM-6 package design using copper lead frame for superior thermal and elec.
requiring a low current high side switch.
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0.51A, 50V, RDS(ON) = 2Ω @ VGS=10V High density cell design for low .
These dual N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and .
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