NDC7002 Datasheet | Fairchild Semiconductor

Description These dual N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. These devices is particularly suited for low voltage applications requiring a low current high side switch. Features 0.51A, 50V, RDS(ON) = 2Ω @ VGS=10V High density cell design for low RDS(ON). Proprietary Super SOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities. High saturation current. SOT-6 (Super SOTTM-6) Absolute Maximum Ratings T A = 25°C unless otherwise noted Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage - Continuous Drain Current - Continuous - Pulsed PD Maximum Power Dissipation (Note 1a) (Note 1b)...