NDP6060
NDP6060 is N-Channel FET manufactured by Fairchild Semiconductor.
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and mutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Features
48A, 60V. RDS(ON) = 0.025Ω @ VGS=10V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
Absolute Maximum Ratings
Symbol VDSS VDGR VGSS ID Parameter Drain-Source Voltage
T C = 25°C unless otherwise noted
NDP6060 60 60 ± 20 ± 40 48 32 144 100 0.67 -65 to 175 275
NDB6060
Units V V V
Drain-Gate Voltage (RGS < 1 MΩ) Gate-Source Voltage
- Continuous
- Nonrepetitive (t P < 50 µs) Drain Current
- Continuous Tc=25o C TC=100 C o
- Continuous
- Pulsed PD
Total Power Dissipation @ TC = 25°C Derate above 25°C
W W/°C °C °C
TJ,TSTG TL
Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
© 1997 Fairchild Semiconductor Corporation
NDP6060 Rev. B1 / NDB6060 Rev. C
Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol Parameter Conditions Min Typ Max Units DRAIN-SOURCE AVALANCHE RATINGS (Note 1) WDSS IAR BVDSS IDSS IGSSF IGSSR VGS(th) RDS(ON) ID(on) g FS Single Pulse Drain-Source Avalanche...
