NDP6020 - N-Channel Logic Level Enhancement Mode Field Effect Transistor

Fairchild

NDP6020 Datasheet Preview — Preview of NDP6020 PDF

Datasheet Details

Part number	NDP6020
Manufacturer	Fairchild ↗
File Size	376.54 KB
Description	N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet	NDP6020_FairchildSemiconductor.pdf

NDP6020 Product details

Description

These logic level N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.

Features

35 A, 20 V. RDS(ON) = 0.023 Ω @ VGS= 4.5 V RDS(ON) = 0.028 Ω @ VGS= 2.7 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount.

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Published: May 12, 2005 |