NDP6050 Datasheet - Fairchild

NDP6050, N-Channel Enhancement Mode Field Effect Transistor

March 1996 NDP6050 / NDB6050 N-Channel Enhancement Mode Field Effect Transistor General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

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Datasheet Details

Part number:

NDP6050

Manufacturer:

Fairchild

File Size:

66.48 KB

Description:

N-Channel Enhancement Mode Field Effect Transistor

Features

* 48A, 50V. RDS(ON) = 0.025Ω @ VGS=10V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design for extremely low

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NDP6050 N-Channel Enhancement Mode Field Effect Transistor Fairchild

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