Part number:
NDP6030PL
Manufacturer:
Fairchild
File Size:
56.60 KB
Description:
P-channel logic level enhancement mode field effect transistor.
These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage app
NDP6030PL Features
* -30 A, -30 V. RDS(ON) = 0.042 Ω @ VGS= -4.5 V RDS(ON) = 0.025 Ω @ VGS= -10 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. High density cell design for extremely low RD
NDP6030PL_FairchildSemiconductor.pdf
Datasheet Details
NDP6030PL
Fairchild
56.60 KB
P-channel logic level enhancement mode field effect transistor.
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