NDP6030L Datasheet - Fairchild

NDP6030L N-Channel Logic Level Enhancement Mode Field Effect Transistor

These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage app.

NDP6030L Features

* 52 A, 30 V. RDS(ON) = 0.0135 Ω @ VGS=10 V RDS(ON) = 0.020 Ω @ VGS=4.5 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. High density cell design for extremely low RDS(ON)

NDP6030L Datasheet (357.87 KB)

NDP6030L Datasheet Preview — Preview of NDP6030L PDF

Datasheet Details

Part number:

NDP6030L

Manufacturer:

Fairchild

File Size:

357.87 KB

Description:

N-channel logic level enhancement mode field effect transistor.

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NDP6030L N-Channel Logic Level Enhancement Mode Field Effect Transistor Fairchild

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