Part number:
NDP6030L
Manufacturer:
Fairchild
File Size:
357.87 KB
Description:
N-channel logic level enhancement mode field effect transistor.
NDP6030L_FairchildSemiconductor.pdf
Datasheet Details
These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage app
NDP6030L Features
* 52 A, 30 V. RDS(ON) = 0.0135 Ω @ VGS=10 V RDS(ON) = 0.020 Ω @ VGS=4.5 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. High density cell design for extremely low RDS(ON)
NDP6030L_FairchildSemiconductor.pdf
Datasheet Details
NDP6030L
Fairchild
357.87 KB
N-channel logic level enhancement mode field effect transistor.
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