NDP6060 - N-Channel FET

ON Semiconductor

NDP6060 Datasheet Preview — Preview of NDP6060 PDF

Datasheet Details

Part number	NDP6060
Manufacturer	ON Semiconductor ↗
File Size	254.01 KB
Description	N-Channel FET
Datasheet	NDP6060-ONSemiconductor.pdf

NDP6060 Product details

Description

These N Channel enhancement mode power field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology.This very high density process has been especially tailored to minimize on state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes.

Features

48 A, 60 V.
RDS(ON) = 0.025 mW @ VGS = 10 V.
Critical DC Electrical Parameters Specified at Elevated Temperature.
Rugged Internal Source.
Drain Diode Can Eliminate the Need for an External Zener Diode Transient Suppressor.
175°C Maximum Junction Temperature Rating.
High Density Cell Design for Extremely Low RDS(ON).
TO.
220 Package for Both Through Hole and Surface Mount.

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Published: Aug 27, 2023 |