NDP6060 Datasheet (ON Semiconductor)

NDP6060, N-Channel FET

These N *Channel enhancement mode power field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology.

This very high density process has been especially tailored to minimize on *state resistance, provide superior switching performance, and withst

NDP6060 Features

* 48 A, 60 V

* RDS(ON) = 0.025 mW @ VGS = 10 V

* Critical DC Electrical Parameters Specified at Elevated Temperature

* Rugged Internal Source

* Drain Diode Can Eliminate the Need for an External Zener Diode Transient Suppressor

* 175°C Maximum Junction T