NDP6030 - N-Channel Enhancement Mode Field Effect Transistor

Fairchild

Datasheet Details

Part number	NDP6030
Manufacturer	Fairchild ↗
File Size	56.18 KB
Description	N-Channel Enhancement Mode Field Effect Transistor
Datasheet	NDP6030_FairchildSemiconductor.pdf

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

46 A, 30 V. RDS(ON) = 0.018 @ VGS=10 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount.

📁 NDP6030 Similar Datasheet

NDP6020P - P-Channel Logic Level Enhancement Mode Field Effect Transistor (ON Semiconductor)
NDP605A - N-Channel Enhancement Mode Power Fleid Effect Transistor (National)
NDP605B - N-Channel Enhancement Mode Power Fleid Effect Transistor (National)
NDP6060 - N-Channel FET (ON Semiconductor)
NDP6060L - N-Channel FET (ON Semiconductor)
NDP606A - N-Channel Enhancement Mode Power Fleid Effect Transistor (National)
NDP606B - N-Channel Enhancement Mode Power Fleid Effect Transistor (National)
NDP02N60Z - N-Channel Power MOSFET (ON Semiconductor)

Other Datasheets by Fairchild

Published: May 12, 2005 |