Part number:
NDP6030
Manufacturer:
Fairchild
File Size:
56.18 KB
Description:
N-channel enhancement mode field effect transistor.
NDP6030_FairchildSemiconductor.pdf
Datasheet Details
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process has been especially tailored to minimize on-state resistance and provide superior switching performance.
These devices are pa
NDP6030 Features
* 46 A, 30 V. RDS(ON) = 0.018 @ VGS=10 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design for extremely l
NDP6030_FairchildSemiconductor.pdf
Datasheet Details
NDP6030
Fairchild
56.18 KB
N-channel enhancement mode field effect transistor.
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