NDP6030 Datasheet - Fairchild

NDP6030 N-Channel Enhancement Mode Field Effect Transistor

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance and provide superior switching performance. These devices are pa.

NDP6030 Features

* 46 A, 30 V. RDS(ON) = 0.018 @ VGS=10 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design for extremely l

NDP6030_FairchildSemiconductor.pdf

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Datasheet Details

Part number:

NDP6030

Manufacturer:

Fairchild

File Size:

56.18 KB

Description:

N-channel enhancement mode field effect transistor.

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NDP6030 NDP6030 N-Channel Enhancement Mode Field Effect Transistor Fairchild

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