NDP6060L - N-Channel FET

Product Overview

Fairchild

Datasheet Details

Part number	NDP6060L
Manufacturer	Fairchild
File Size	360.51 KB
Description	N-Channel FET
Datasheet	NDP6060L Datasheet
Additional preview pages of the NDP6060L datasheet.

Product details

Description

These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

Features

48A, 60V. RDS(ON) = 0.025Ω @ VGS = 5V. Low drive requirements allowing operation directly from logic drivers. VGS(TH) < 2.0V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount.

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Published: May 12, 2005 |