10N60C Datasheet 600V N-Channel MOSFET

Manufacturer: Fairchild (now onsemi)

10N60C 600v n-channel mosfet by Fairchild (now onsemi) - Datasheet Preview

Datasheet Details

Part number	10N60C
Manufacturer	Fairchild (now onsemi)
File Size	870.91 KB
Description	600V N-Channel MOSFET
Datasheet	10N60C Datasheet

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

Overview

www.DataSheet4U.com FQP10N60C/FQPF10N60C FQP10N60C/FQPF10N60C 600V N-Channel MOSFET QFET TM.

Key Features

9.5A, 600V, RDS(on) = 0.73Ω @VGS = 10 V.
Low gate charge ( typical 44 nC).
Low Crss ( typical 18 pF).
Fast switching.
100% avalanche tested.
Improved dv/dt capability D ! GDS TO-220 FQP Series GD S TO-220F FQPF Series G!.
◀▲.
! S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Cur.

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