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Fairchild Semiconductor Electronic Components Datasheet

2N7002W Datasheet

N-channel MOSFET

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October 2007
2N7002W
N-Channel Enhancement Mode Field Effect Transistor
Features
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Ultra-Small Surface Mount Package
• Lead Free/RoHS Compliant
D
G
SOT - 323
Marking : 2N
S
Absolute Maximum Ratings * Ta = 25°C unless otherwise noted
Symbol
Parameter
Value
VDSS
VDGR
VGSS
Drain-Source Voltage
Drain-Gate Voltage RGS 1.0M
Gate-Source Voltage
Continuous
Pulsed
60
60
±20
±40
ID Drain Current
Continuous
Continuous @ 100°C
Pulsed
115
73
800
TJ , TSTG
Junction and Storage Temperature Range
-55 to +150
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Units
V
V
V
mA
°C
Thermal Characteristics
Symbol
Parameter
PD Total Device Dissipation
Derating above TA = 25°C
RθJA
Thermal Resistance, Junction to Ambient *
* Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimun land pad size,
Value
200
1.6
625
Units
mW
mW/°C
°C/W
© 2007 Fairchild Semiconductor Corporation
2N7002W Rev. A
1
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

2N7002W Datasheet

N-channel MOSFET

No Preview Available !

Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Condition
MIN
Off Characteristics (Note1)
BVDSS
IDSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
IGSS
Gate-Body Leakage
On Characteristics (Note1)
VGS= 0V, ID=10uA
VDS= 60V, VGS= 0V
VDS= 60V, VGS= 0V, @TC = 125°C
VGS= ±20V, VDS= 0V
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250uA
RDS(ON)
Satic Drain-Source On-Resistance VGS = 5V, ID = 0.05A,
VGS = 10V, ID = 0.5A, @Tj = 125°C
ID(ON)
On-State Drain Current
VGS = 10V, VDS= 7.5V
gFS
Forward Transconductance
VDS = 10V, ID = 0.2A
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics
VDS = 25V, VGS= 0V, f = 1.0MHz
tD(ON)
tD(OFF)
Turn-On Delay Time
Turn-Off Delay Time
VDD = 30V, ID = 0.2A, VGEN= 10V
RL = 150, RGEN = 25
Note1 : Short duration test pulse used to minimize self-heating effect.
60
-
-
1.0
-
-
0.5
80
-
-
-
-
-
TYP MAX Units
78
0.001
7
0.2
-
1.0
500
±10
V
uA
nA
1.76
1.6
2.53
1.43
356.5
2.0
7.5
13.5
-
-
V
A
mS
37.8 50
12.4 25
6.5 7.0
pF
pF
pF
5.85 20
12.5 20
ns
© 2007 Fairchild Semiconductor Corporation
2N7002W Rev. A
2
www.fairchildsemi.com


Part Number 2N7002W
Description N-channel MOSFET
Maker Fairchild Semiconductor
PDF Download

2N7002W Datasheet PDF






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