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BD435 - NPN Epitaxial Silicon Transistor

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Other Datasheets by Fairchild Semiconductor
  • BD433 - NPN Epitaxial Silicon Transistor
  • BD434 - PNP Epitaxial Silicon Transistor
  • BD436 - PNP Epitaxial Silicon Transistor
  • BD437 - NPN Epitaxial Silicon Transistor
  • BD438 - PNP Epitaxial Silicon Transistor
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  • BD411 - Medium Power Linear and Switching Applications
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BD433/435/437 BD433/435/437 Medium Power Linear and Switching Applications • Complement to BD434, BD436 and BD438 respectively 1 TO-126 2.Collector 3.Base 1. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : BD433 : BD435 : BD437 VCES Collector-Emitter Voltage : BD433 : BD435 : BD437 Collector-Emitter Voltage : BD433 : BD435 : BD437 Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature 22 32 45 22 32 45 22 32 45 5 4 7 1 36 150 - 65 ~ 150 V V V V V V V V V V A A A W °C °C Value Units VCEO VEBO IC ICP IB PC TJ TSTG ©2001 Fairchild Semiconductor Corporation Rev.
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