FCB11N60 Datasheet - Fairchild Semiconductor

N-Channel MOSFET

FCB11N60 Features

* 650V @ TJ = 150°C

* Typ. RDS(on) = 320 mΩ

* Ultra Low Gate Charge (Typ. Qg = 40 nC)

* Low Effective Output Capacitance (Typ. Coss(eff.) = 95 pF)

* 100% Avalanche Tested

* RoHS Compliant Application

* Lighting

* Solar Inverter

FCB11N60 General Description

SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior s.

FCB11N60 Datasheet (399.11 KB)

FCB11N60 Datasheet Preview — Preview of FCB11N60 PDF

Datasheet Details

Part number:

FCB11N60

Manufacturer:

Fairchild Semiconductor

File Size:

399.11 KB

Description:

N-channel mosfet.

📁 Related Datasheet

FCB11N60F N-Channel MOSFET (Fairchild Semiconductor)

FCB110N65F MOSFET (Fairchild Semiconductor)

FCB110N65F N-Channel MOSFET (INCHANGE)

FCB199N65S3 N-Channel MOSFET (INCHANGE)

FCB199N65S3 MOSFET (ON Semiconductor)

FCB-MA130 USB 3.0 Interface (InterTest)

FCB-MA130 13 Mega Pixels Digital Camera Module (Sony)

FCB070N65S3 N-Channel Power MOSFET (ON Semiconductor)

FCB099N65S3 N-Channel MOSFET (ON Semiconductor)

FCB20N60 N-Channel MOSFET (Fairchild Semiconductor)

TAGS

FCB11N60 N-Channel MOSFET Fairchild Semiconductor

Image Gallery

FCB11N60 Features

FCB11N60 General Description

Datasheet Details

File Size:

Description:

FCB11N60 Distributor