FCB11N60 datasheet, mosfet equivalent, Fairchild Semiconductor

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FCB11N60 Features and benefits

* 650V @ TJ = 150°C
* Typ. RDS(on) = 320 mΩ
* Ultra Low Gate Charge (Typ. Qg = 40 nC)
* Low Effective Output Capacitance (Typ. Coss(eff.) = 95 pF)
* 1.

FCB11N60 Application

such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. D D G S D2-PAK G S M.

FCB11N60 Description

SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailor.

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