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FCB11N60F - N-Channel MOSFET

Datasheet Summary

Description

SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.

Features

  • 650V @TJ = 150°C.
  • Typ. RDS(on) = 0.32Ω.
  • Fast Recovery Type ( trr = 120ns ).
  • Ultra low gate charge (typ. Qg = 40nC).
  • Low effective output capacitance (typ. Coss. eff = 95pF).
  • 100% avalanche tested May 2006 TM tm.

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Datasheet Details

Part number FCB11N60F
Manufacturer Fairchild Semiconductor
File Size 1.01 MB
Description N-Channel MOSFET
Datasheet download datasheet FCB11N60F Datasheet
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FCB11N60F 600V N-Channel MOSFET SuperFET FCB11N60F 600V N-Channel MOSFET Features • 650V @TJ = 150°C • Typ. RDS(on) = 0.32Ω • Fast Recovery Type ( trr = 120ns ) • Ultra low gate charge (typ. Qg = 40nC) • Low effective output capacitance (typ. Coss.eff = 95pF) • 100% avalanche tested May 2006 TM tm Description SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy.
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