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FCB11N60 - N-Channel MOSFET

General Description

SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance.

Key Features

  • 650V @ TJ = 150°C.
  • Typ. RDS(on) = 320 mΩ.
  • Ultra Low Gate Charge (Typ. Qg = 40 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 95 pF).
  • 100% Avalanche Tested.
  • RoHS Compliant.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FCB11N60 — N-Channel SuperFET® MOSFET FCB11N60 N-Channel SuperFET® MOSFET 600 V, 11 A, 380 mΩ Features • 650V @ TJ = 150°C • Typ. RDS(on) = 320 mΩ • Ultra Low Gate Charge (Typ. Qg = 40 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 95 pF) • 100% Avalanche Tested • RoHS Compliant Application • Lighting • Solar Inverter • AC-DC Power Supply November 2013 Description SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy.