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FCB11N60 - N-Channel MOSFET

Datasheet Summary

Description

SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance.

Features

  • 650V @ TJ = 150°C.
  • Typ. RDS(on) = 320 mΩ.
  • Ultra Low Gate Charge (Typ. Qg = 40 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 95 pF).
  • 100% Avalanche Tested.
  • RoHS Compliant.

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Datasheet Details

Part number FCB11N60
Manufacturer Fairchild Semiconductor
File Size 399.11 KB
Description N-Channel MOSFET
Datasheet download datasheet FCB11N60 Datasheet
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FCB11N60 — N-Channel SuperFET® MOSFET FCB11N60 N-Channel SuperFET® MOSFET 600 V, 11 A, 380 mΩ Features • 650V @ TJ = 150°C • Typ. RDS(on) = 320 mΩ • Ultra Low Gate Charge (Typ. Qg = 40 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 95 pF) • 100% Avalanche Tested • RoHS Compliant Application • Lighting • Solar Inverter • AC-DC Power Supply November 2013 Description SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy.
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