FCB11N60 Datasheet | Fairchild Semiconductor

- N-Channel SuperFET® MOSFET N-Channel SuperFET® MOSFET 600 V, 11 A, 380 mΩ Features - 650V @ TJ = 150°C - Typ. RDS(on) = 320 mΩ - Ultra Low Gate Charge (Typ. Qg = 40 nC) - Low Effective Output Capacitance (Typ. Coss(eff.) = 95 pF) - 100% Avalanche Tested - RoHS pliant Application - Lighting - Solar Inverter - AC-DC Power Supply November 2013 Description SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching...