FCB11N60F Key Features
- 650V @TJ = 150°C
- Typ. RDS(on) = 0.32Ω
- Fast Recovery Type ( trr = 120ns )
- Ultra low gate charge (typ. Qg = 40nC)
- Low effective output capacitance (typ. Coss.eff = 95pF)
- 100% avalanche tested
- Part: FCB11N60F
- Manufacturer: Fairchild (official site)
- Size: 1.01 MB
Related Fairchild Datasheets
| Part Number | Description |
|---|---|
| FCB11N60 | N-Channel MOSFET |
| FCB110N65F | MOSFET |
| FCB20N60 | N-Channel MOSFET |
| FCB20N60F | N-Channel MOSFET |
| FCB20N60_F085 | MOSFET |
FCB11N60F Description
SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very...