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FCD3400N80Z - MOSFET

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General Description

SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.

This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy.

Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power and industrial power applications.

Overview

FCD3400N80Z / FCU3400N80Z — N-Channel SuperFET® II MOSFET March 2015 FCD3400N80Z / FCU3400N80Z N-Channel SuperFET® II MOSFET 800 V, 2 A, 3.

Key Features

  • RDS(on) = 2.75 Ω (Typ. ).
  • Ultra Low Gate Charge (Typ. Qg = 7.4 nC).
  • Low Eoss (Typ. 0.9 uJ @ 400V).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 41 pF).
  • 100% Avalanche Tested.
  • RoHS Compliant.
  • ESD Improved Capability.

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