FCD600N60Z Key Features
- 650 V @ TJ = 150°C
- Typ. RDS(on) = 510 mΩ
- Ultra Low Gate Charge (Typ. Qg = 20 nC)
- Low Effective Output Capacitance (Typ. Coss(eff.) = 74 pF)
- 100% Avalanche Tested
- ESD Improved Capacity
- RoHS pliant
- Part: FCD600N60Z
- Manufacturer: Fairchild (official site)
- Size: 583.79 KB
Related Fairchild Datasheets
| Part Number | Description |
|---|---|
| FCD620N60ZF | N-Channel MOSFET |
| FCD1300N80Z | MOSFET |
| FCD2250N80Z | MOSFET |
| FCD3400N80Z | MOSFET |
| FCD380N60E | N-Channel MOSFET |
FCD600N60Z Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the...