FCH041N60E Key Features
- 650 V @ TJ = 150°C
- Typ. RDS(on) = 36 mΩ
- Ultra Low Gate Charge (Typ. Qg = 285 nC)
- Low Effective Output Capacitance (Typ. Coss(eff.) = 735 pF)
- 100% Avalanche Tested
- An Integrated Gate Resistor
- RoHS pliant
- Part: FCH041N60E
- Description: MOSFET
- Manufacturer: Fairchild Semiconductor
- Size: 671.14 KB
Other FCH041N60E Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
onsemi |
FCH041N60E | N-Channel MOSFET |
|
onsemi |
FCH041N60F | N-Channel MOSFET |
Inchange Semiconductor |
FCH041N60F | N-Channel MOSFET |
|
onsemi |
FCH041N60F-F085 | N-Channel MOSFET |