FCH150N65F Key Features
- 700 V @ TJ = 150°C
- Typ. RDS(on) = 133 mΩ
- Ultra Low Gate Charge (Typ. Qg = 72 nC)
- Low Effective Output Capacitance (Typ. Coss(eff.) = 361 pF)
- 100% Avalanche Tested
- RoHS pliant
| Part Number | Description |
|---|---|
| FCH104N60 | N-Channel MOSFET |
| FCH104N60F | MOSFET |
| FCH110N65F | MOSFET |
| FCH125N60E | N-Channel SuperFET II Easy-Drive MOSFET |
| FCH130N60 | MOSFET |