FCH47N60 Key Features
- 650 V @ TJ = 150°C
- Typ. RDS(on) = 58 mΩ
- Ultra Low Gate Charge (Typ. Qg = 210 nC)
- Low Effective Output Capacitance (Typ. Coss(eff.) = 420 pF)
- 100% Avalanche Tested
- RoHS pliant
| Manufacturer | Part Number | Description |
|---|---|---|
| FCH47N60 | N-Channel MOSFET | |
| FCH47N60-F085 | N-Channel MOSFET | |
| FCH47N60F | N-Channel MOSFET | |
| FCH47N60F-F085 | N-Channel MOSFET | |
| FCH47N60N | N-Channel MOSFET |