FCH47N60NF Datasheet - ON Semiconductor

N-Channel MOSFET

FCH47N60NF Features

* 650 V @ TJ = 150°C

* Typ. RDS(on) = 57.5 mW

* Ultra Low Gate Charge (Typ. Qg = 240 nC)

* Low Effective Output Capacitance (Typ. Coss(eff.) = 420 pF)

* 100% Avalanche Tested

* This Device is Pb

* Free and is RoHS Compliant Applications

FCH47N60NF General Description

The SUPREMOS® MOSFET is ON Semiconductor’s next generation of high voltage super *junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on *resis.

FCH47N60NF Datasheet (392.61 KB)