| Description | The SUPREMOS® MOSFET is ON Semiconductor’s next generation of high voltage super−junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on−resistance, superior switching performance and ruggedness. SUPREMOS MOSFET is suitable for high frequency switching power... |
| Features |
• 650 V @ TJ = 150°C • Typ. RDS(on) = 57.5 mW • Ultra Low Gate Charge (Typ. Qg = 240 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 420 pF) • 100% Avalanche Tested • This Device is Pb−Free and is RoHS Compliant Applications • Solar Inverter • AC−DC Power Supply www.onsemi.com VDS 600 V RDS(ON) MAX 65 mW @ 10 V D ID MAX 48.5 A G S N-... |
| Datasheet |
 FCH47N60NF Datasheet - 392.61KB |
