FCH47N60NF mosfet equivalent, n-channel mosfet.
* 650 V @ TJ = 150°C
* Typ. RDS(on) = 57.5 mW
* Ultra Low Gate Charge (Typ. Qg = 240 nC)
* Low Effective Output Capacitance (Typ. Coss(eff.) = 420 pF)
such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SUPREMOS FRFET® MOSFET’s o.
The SUPREMOS® MOSFET is ON Semiconductor’s next
generation of high voltage super−junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process co.
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