FCH47N60N Description
The SUPREMOS MOSFET is ON Semiconductor’s next generation of high voltage super−junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on−resistance, superior switching performance and ruggedness. SUPREMOS MOSFET is suitable for high frequency switching power converter...
FCH47N60N Key Features
- 650 V @ TJ = 150°C
- RDS(on) = 51.5 mW (Typ.) @ VGS = 10 V, ID = 23.5 A
- Ultra Low Gate Charge (Typ. Qg = 115 nC)
- Low Effective Output Capacitance (Typ. Coss(eff.) = 511 pF)
- 100% Avalanche Tested
- This Device is Pb-Free and is RoHS pliant