FCH47N60N Overview
Key Specifications
Package: TO-247
Mount Type: Through Hole
Pins: 3
Height: 24.75 mm
Description
The SUPREMOS MOSFET is ON Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness.
Key Features
- 650 V @ TJ = 150°C
- RDS(on) = 51.5 mW (Typ.) @ VGS = 10 V, ID = 23.5 A
- Ultra Low Gate Charge (Typ. Qg = 115 nC)
- Low Effective Output Capacitance (Typ. Coss(eff.) = 511 pF)
- 100% Avalanche Tested
